The invention discloses a method for preparing an IGBT short-circuit collector electrode structure and belongs to power semiconductor devices. The method comprises the steps that after a grid electrode structure and a source electrode structure are formed on the front face of the IGBT structure, the thickness of the back face of an N- type substrate is reduced, and a masking layer is arranged on the back face of the N- type substrate in a depositing mode; a part of the masking layer and a part of the N- type substrate are etched in sequence and a groove is formed in the back face of the N- type substrate; a thin film layer is arranged on the masking layer and the groove in a depositing mode, the thin film layer is made of germanium, and the thickness of the germanium is larger than the depth of the groove; the portion, on the masking layer, of the thin film layer is etched out, after flattening is conducted, ion implantation and high-temperature annealing are conducted in sequence, holes are etched on the masking layer, metal is deposited, and a collector electrode is then formed. According to the device characteristics, the connection voltage of the IGBT is reduced, the switch-off time of the IGBT is shortened, and the compromise characteristic that the IGBT is switched on and switched off is optimized; according to the preparing technology, impurities are completely activated under a relatively-low temperature, so that control over the technology is easy.