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发明公开
CN103746054A 阻挡电子泄漏和缺陷延伸的外延生长方法及其结构 失效 - 权利终止

阻挡电子泄漏和缺陷延伸的外延生长方法及其结构
摘要：
本发明提供了一种阻挡电子泄漏和缺陷延伸的外延生长方法，在所述生长多量子阱InxGa（1-x）N/GaN层和生长P型GaN层之间，通入NH3、TMGa、TMAl，生长厚度为8-25nm的电子阻挡层；该层包括2-6组双层结构，每一双层结构的UAlGaN层相比上一双层结构的UAlGaN层中的Al组分含量增加15%-50%。本发明采用了Al组分逐层升高的UAlGaN/UGaN结构作为电子阻挡层，改变了传统P-spacer能带的单一能阶高度分布，减弱了其对空穴注入时的阻挡作用，提高MQW的发光效率。
摘要（英）：

The invention provides an epitaxial growth method for blocking electron leakage and defect extension. The method comprises letting NH3, TMGa and TMAl in between a growth multi-quantum well InxGa(1-x)N/GaN layer and a growth P-type GaN layer, and growing an electron barrier layer with a growth thickness of 8 to 25 nm, wherein the layer comprises two to six groups of double-layer structures, and compared to the Al component content of the UAlGaN layer of the last double-layer structure, the Al component content of the UAlGaN layer of each double-structure is increased by 15% to 50%. According to the invention, the UAlGaN/UGaN structure with layer-to-layer gradually increased Al components is utilized as an electron barrier layer, the single energy level height distribution of a conventional P-spacer energy band is changed, the blocking effects on cavity injection are weakened, and the MQW luminescence efficiency is improved.

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