知搜-全球专利检索

  1. 登录
  2. 注册
发明授权
CN103681388B 制造半导体器件的方法 失效 - 权利终止

制造半导体器件的方法
摘要：
本发明涉及制造半导体器件的方法。提供一种具有改善质量的半导体器件。本发明的半导体器件包括具有：其上具有半导体芯片的带式衬底、围绕半导体芯片放置的多个焊接区焊盘、用于将半导体芯片的电极焊盘电耦合至焊接区焊盘的多个导线，以及提供在带式衬底的下表面上的多个端子部。带式衬底的焊接区焊盘和半导体芯片之间的第一区的表面粗糙度的局部尖峰之间的平均距离小于带式衬底的焊接区焊盘和第一区之间的第二区的表面粗糙度的局部尖峰的平均距离。
摘要（英）：

To provide a semiconductor device having an improved quality. The semiconductor device of the invention has a tape substrate having a semiconductor chip thereon, a plurality of land pads placed around the semiconductor chip, a plurality of wires for electrically coupling the electrode pad of the semiconductor chip to the land pad, and a plurality of terminal portions provided on the lower surface of the tape substrate. An average distance between local peaks of the surface roughness of a first region between the land pad of the tape substrate and the semiconductor chip is smaller than an average distance of local peaks of the surface roughness of a second region between the land pad of the tape substrate and the first region.

公开/授权文献
0/0