The method comprises removing a material from an electrically non-conductive insulating material (2) of a substrate (1) along desired break edges of the substrate. The removing step is carried out: such that, in corner regions (14) of desired break edges coincidence, the material is removed higher than that the material is removed in the remaining regions of the desired break edges; and by pulsed laser beam (20). The pulsed laser beam is introduced to the insulating material to perform the removal step using recesses per unit length along the desired break edges. The method comprises removing a material from an electrically non-conductive insulating material (2) of a substrate (1) along desired break edges of the substrate. The removing step is carried out: such that, in corner regions (14) of desired break edges coincidence, the material is removed higher than that the material is removed in the remaining regions of the desired break edges; and by pulsed laser beam (20). The pulsed laser beam is introduced to the insulating material to perform the removal step using recesses per unit length along the desired break edges. In a first sub-step, the laser beam is introduced into the insulating material using a first recess, and in a second sub-step, the laser beam is introduced to the insulating material using a second recess. The first and second recesses are arranged such that centers of the first and second recesses coincide or are arranged offset to one another. The laser beam has same power in the first and second sub-step. Independent claims are included for: (1) a method of breaking a substrate of a power semiconductor component; and (2) a substrate.