知搜-全球专利检索

  1. 登录
  2. 注册
发明公开
CN103545195A 基底和断裂准备至少一个功率半导体构件的基底的方法 有权

基底和断裂准备至少一个功率半导体构件的基底的方法
摘要：
本发明涉及一种基底和断裂准备至少一个功率半导体构件的基底的方法，该方法具有以下方法步骤：a）提供基底（1），其中，基底（1）具有不导电的绝缘材料体（2），b）在绝缘材料体（2）上沿着基底（1）的期望的断裂棱边（A、B、C、D、E）进行材料剥除，其中，材料剥除以如下方式执行，即，在至少两个期望的断裂棱边（A、B、C、D、E）相会的角区域（14）中执行相对于在期望的断裂棱边（A、B、C、D、E）的其余区域（17）中所执行的材料剥除更高度的材料剥除。本发明能够实现在断裂用于至少一个功率半导体构件的基底（1）时减少在绝缘材料体（2）上的不期望的裂缝。
摘要（英）：

The invention relates to a method for breaking preparing a substrate (1) for at least one power semiconductor component having the following method steps: a) providing the substrate (1), wherein the substrate (1) having an electrically non-conductive insulating material (2), b) removal of material on the insulating material (2) along a desired break lines (A, B, C, D, E) of the substrate (1), wherein the material removal is carried out such that in corner regions (14) on which at least two desired (A, B, C, D, E) break lines meet, a compared to the material removal which, in the remaining regions (17) of the desired break lines (A, B, C, D, E) is carried out, higher material removal is carried out. The invention further relates to a respective substrate (1).The invention enables the reduction of unexpected outbreaks on insulating (2) the breaking of a substrate (1) for at least one power semiconductor component.

公开/授权文献
0/0