The invention provides a RRAM memory read circuit comprising a resistive unit array comprising a plurality of RRAM resistive units connected in series and parallel, wherein the resistive unit array is used for realizing a data storing function; a reference unit array comprising a plurality of RRAM resistive units connected in series and parallel, wherein the reference unit is used for providing reference voltages; a multilevel regulation current module comprising a decoder and a multilevel reference branch module, wherein the multilevel reference branch module comprises a multilevel reference branch, and the multilevel reference branch corresponds to a multilevel reference current value; a current mirror with two ends respectively connected with a sense amplifier and the multilevel reference branch module, wherein the current mirror is used for realizing current mirroring; and the sense amplifier with a positive input end connected with the resistive unit array, a negative input end connected with the current mirror, and an output end used for outputting data. With the circuit provided by the invention, a resistance drift phenomenon is overcome, and array operable times are effectively prolonged. The circuit has the advantages of low power consumption and high speed, and is stable and durable.