Provided is an apparatus for producing a SiC single crystal which facilitates feeding of carbon to the vicinity of a SiC seed crystal. A control device controls an induction heating apparatus such that a frequency f of an alternating current that flows to the induction heating apparatus meets the requirements of formula (1), when the penetration depth of electromagnetic waves into a crucible sidewall by the induction heating apparatus is D1 (mm), the penetration depth of electromagnetic waves into an SiC solution is D2 (mm), the thickness of the crucible sidewall is T (mm), and the internal radius of the crucible is R (mm). (D1-T) x D2/R>1 (1) D1 is defined by formula (2), and D2 is defined by formula (3). D1=503292 x (1/(f x sc x [mu]c))1/2 (2) D2=503292 x (1/(f x ss x [mu]s))1/2 (3) Here, sc is the conductivity (S/m) of the sidewall and ss is the conductivity (S/m) of the SiC solution, and [mu]c is the relative permeability (dimensionless quantity) of the sidewall and [mu]s is the relative permeability (dimensionless quantity) of the SiC solution.