Disclosed is a growth method of a light-emitting diode (LED) epitaxial wafer. When growth of an N type doped gallium nitride (GaN) layer with silicon (Si) is carried out, a method of alternate growth of the N type doped GaN layer with Si and a U type undoped GaN layer with no Si is adopted. According to the growth method of the LED epitaxial wafer, the thickness of an original N type GaN layer is kept, a doped GaN layer with Si with continuous growth in a traditional growth method is modified into an alternate structure layer formed by the N type doped GaN layer with Si and a U type GaN layer with no doped Si, and usage amount of dopant is saved to a certain degree. In an alternate structure of the N type doped GaN layer with Si and the U type undoped GaN layer with no Si, the doped GaN lay with Si is low in resistance value, and the undoped GaN layer with no Si is high in resistance value. Due to the facts that the doped GaN layer with Si is low in resistance value, and the undoped GaN layer with no Si is high in resistance value, horizontal expansion capacity of electrons is strengthened, and thus a driving voltage is reduced, and meanwhile luminance and a lighting effect are improved.