The invention relates to a deposition method of a Cu/ZnO/Al photoelectric transparent conducting film, belonging to the field of transparent conducting materials. The method comprises the following steps: (1) sequentially carrying out ultrasonic cleaning on a substrate with acetone, ethanol and deionized water, blow-drying with nitrogen gas, and sending the substrate into a reaction chamber; (2) depositing a magnetron sputtering Al film; (3) preparing a middle-layer ZnO film by organic substance chemical vapor deposition; (4) depositing a magnetron sputtering Cu film; and (5) carrying out high-temperature annealing on the Cu/ZnO/Al multilayer-structure transparent conducting film at 100-400 DEG C for 30 minutes to obtain the Cu/Al-codoped ZnO photoelectric transparent conducting film. The preparation technique is simple, and the deposition process is easy to control. The transparent conducting film has the advantages of favorable uniformity, excellent photoelectric properties and low resistivity (down to 8.0*10<-4>Omega.cm), and the light transmittance is up to higher than 82%. The transparent conducting film can be used for manufacturing transparent electrodes of photoelectric devices, such as solar cells, light-emitting diodes, LCDs (liquid crystal displays), mobile phones and the like.