Disclosed are: a Bi-Ge-O sintered body sputtering target which is composed of bismuth (Bi), germanium (Ge) and oxygen (O) and characterized in that the atom number ratio of Bi and Ge satisfies 0.57 12GeO20 and Bi4Ge3O12; a method for producing the Bi-Ge-O sintered body sputtering target; and an optical recording medium. Specifically disclosed is a Bi-Ge-O sintered body sputtering target which has excellent thermal shock resistance and is capable of achieving greatly improved production efficiency since the Bi-Ge-O sintered body sputtering target enables high-power sputtering. The Bi-Ge-O sintered body sputtering target does not suffer from cracks and generates little particles during the sputtering, so that a thin film with high quality can be stably produced and an optical recording medium that is free from recording bit errors can be obtained. Also specifically disclosed are: a method for producing the Bi-Ge-O sintered body sputtering target; and an optical recording medium.