The invention discloses a multi-emitter bipolar transistor, a resistive random access memory (RRAM) gated by the multi-emitter bipolar transistor, and a manufacturing method for the RRAM. The transistor comprises a collector, a base formed on the collector, and at least two emitters formed on the base, wherein the emitters are arranged at intervals; the base is the common base of all the emitters; and the collector is the common collector of all the emitters. The base and the collector are shared by the emitters of the bipolar transistor, so that the area of the bipolar transistor is reduced; and the RRAM gated by the multi-emitter bipolar transistor is adopted, and the area of the gated transistor is reduced, so that the memory density of the RRAM is improved.