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CN102318046B 通过倾斜离子注入来形成鳍和鳍式FET 失效 - 权利终止 转让

通过倾斜离子注入来形成鳍和鳍式FET
摘要：
通过提供衬底并且在衬底顶上形成含半导体层来形成半导体器件。然后在含半导体层顶上形成具有多个开口的掩膜，其中掩膜的多个开口中的相邻开口以最小特征尺寸隔开。此后，进行倾斜离子注入以向含半导体层的第一部分引入掺杂剂，其中实质上不含掺杂剂的其余部分存在于掩膜之下。相对于含半导体层的实质上不含掺杂剂的其余部分选择性地去除含半导体层的包含掺杂剂的第一部分以提供亚光刻尺寸的图案，并且向衬底中转移图案以提供亚光刻尺寸的鳍结构。
摘要（英）：

A semiconductor device is formed by providing a substrate and forming a semiconductor-containing layer atop the substrate. A mask having a plurality of openings is then formed atop the semiconductor-containing layer, wherein adjacent openings of the plurality of openings of the mask are separated by a minimum feature dimension. Thereafter, an angled ion implantation is performed to introduce dopants to a first portion of the semiconductor-containing layer, wherein a remaining portion that is substantially free of dopants is present beneath the mask. The first portion of the semiconductor-containing layer containing the dopants is removed selective to the remaining portion of semiconductor-containing layer that is substantially free of the dopants to provide a pattern of sublithographic dimension, and the pattern is transferred into the substrate to provide a fin structure of sublithographic dimension.

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