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发明授权
CN102315182B 半导体芯片及其制造方法 有权

半导体芯片及其制造方法
摘要：
本发明实施例公开了一种半导体芯片及其制造方法，其中半导体芯片包含一导电凸块位于一半导体芯片上。提供一基材，其上具有一连接焊盘，该连接焊盘上具有一凸块下金属层。铜柱具有一顶面及凹型侧壁，该顶面具有一第一宽度。一镍层，具有一顶面及一底面，位于该铜柱的顶面上。该镍层的底面具有一第二宽度。第二宽度对第一宽度的比例为约0.93至1.07。一焊料位于该盖层的该顶面上。本发明可减少导电柱与焊料之间的界面因应力而产生的破裂。
摘要（英）：

An embodiment of the disclosure includes a conductive bump on a semiconductor die. A substrate is provided. A bond pad is over the substrate. An under bump metallurgy (UBM) layer is over the bond pad. A copper pillar is over the UBM layer. The copper pillar has a top surface with a first width and sidewalls with a concave shape. A nickel layer having a top surface and a bottom surface is over the top surface of the copper pillar. The bottom surface of the nickel layer has a second width. A ratio of the second width to the first width is between about 0.93 to about 1.07. A solder material is over the top surface of the cap layer.

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