The invention discloses a method for reading out a high-accuracy signal in the technical field of micro-electrons and photoelectrons. The method is applicable to the field of an array type infrared image sensor. The array type infrared image sensor is mainly provided with an infrared detector array and a column-level read-out circuit; dark-pixel references are arranged around the conventional pixel array; firstly, the data of an upper reference row and a lower reference row is stored, and row compensation values of the data of all rows are calculated; secondly, pixels of all rows in the infrared detector array are sequentially gated row by row to finish reading out of frame data, and in the method, row compensation values and column compensation values of all columns of data in the current row are calculated by a calibration circuit, and the data of the infrared detector array is subjected to two-dimensional linear compensation; and finally, column gating logic is generated by a column selection circuit, so all columns of the compensated data of the current row are read out of a chip. By the method, background signals of pixels can be effectively inhibited, the output accuracy of a read-out circuit is improved, and the problem of non-consistence caused by relative deviation of a process can be eliminated by a simpler circuit.