The invention discloses a method for forming a polysilicon P type column in an N type super-junction VDMOS (Vertical Double Diffused Metal Oxide Semiconductor), comprising the following steps of: firstly, forming an N type drain region and an N type silicon epitaxial layer on an N type silicon substrate and etching a V-shaped groove or a conical hole on the N type silicon epitaxial layer; secondly, depositing three layer of polysilicon to fully fill the V-shaped groove or the conical hole, wherein a P type impurity is injected after the second layer of polysilicon is deposited, the total amount of the P type impurity in the N type silicon epitaxial layer is equal to that of an N type impurity after the P type impurity injected, and after the three layers of polysilicon is deposited, the surface of the substrate is ground to be flatted; thirdly, annealing and advancing the injected P type impurity to form the polysilicon P type column; and fourthly, forming a source region and a grid electrode of the N type super-junction VDMOS as well as metal contacts of a source electrode, a drain electrode and the grid electrode. By using the forming method, the process cost can be reduced, andthe characteristics of low-conducting resistance and high voltage resistance endowed by the device can be achieved; and in addition, the method has strong process adjustability of process parameters and wide application range.