The invention discloses a method for forming a P-type pole in an N-type super junction vertical double diffused metal oxide semiconductor (VDMOS), which comprises the following: a step 1 of forming an N-type drain region and an N-type silicon epitaxial layer on an N-type silicon substrate and carrying out etching to form a V-shaped groove or a cone hole on the N-type silicon epitaxial layer; a step 2 of forming a sacrificial oxide layer and carrying out injection of high-energy P-type impurities on the V-shaped groove or the cone hole, so that the total content of the P-type impurities and the total content of N-type impurities in the N-type silicon epitaxial layer are equal after injection; a step 3 of carrying out high temperature propulsion on the injected P-type impurities to form theP-type pole; and a step 4 of removing the sacrificial oxide layer, fully filling silicon oxide in the V-shaped groove or the cone hole, carrying out grinding and flattening on the surface of the P-type pole and then forming a source region, a grid and metal contacts of the source region, the drain region and the grid of the N-type super junction VDMOS. By the method, the process cost can be reduced and the characteristics of low on-resistance and high withstand voltage of a device can be realized. Moreover, a process parameter has high adjustability. The method has wide application range.