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发明授权
CN102007584B 半导体装置结构及其相关工艺 有权

半导体装置结构及其相关工艺
摘要：
本发明揭示一种改良式高可靠性功率凹陷场板(RFP)结构以及其制造工艺和操作处理。该结构包括位于这些RFP沟槽底下的复数个局部化掺杂物浓度区域，其浮动或延伸并且与MOSFET的本体层汇合，或通过竖直掺杂区域与该源极层连接。此局部掺杂物区降低该装置中本体二极管的少数载流子注入效率，并且改变该本体二极管反向恢复期间的该电场分布。
摘要（英）：

Improved highly reliable power RFP structures and fabrication and operation processes. The structure includes plurality of localized dopant concentrated zones beneath the trenches of RFPs, either floating or extending and merging with the body layer of the MOSFET or connecting with the source layer through a region of vertical doped region. This local dopant zone decreases the minority carrier injection efficiency of the body diode of the device and alters the electric field distribution during the body diode reverse recovery.

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