Provided is an SGT manufacturing method, wherein a metal is used for a gate electrode, a manufacturing step considering metal contamination is included, and a structure for reducing resistances of a source, a drain and a gate and desired gate length, source and drain shapes and diameter of a columnar semiconductor are obtained. The manufacturing method includes a step of forming a columnar semiconductor layer of a first conductivity type on a flat semiconductor layer; a step of forming a first semiconductor layer of a second conductivity type on the flat semiconductor layer; a step of forming, at the periphery of the semiconductor layer of the first conductivity type, a gate electrode composed of a gate insulating film and a metal; a step of forming a side-wall-like insulating film above the gate, on an upper side wall of the semiconductor layer of the first conductivity type, and on a side wall of the gate electrode; a step of forming a second semiconductor layer of the second conductivity type above the semiconductor layer of the first conductivity type; a step of forming a compound composed of a metal and a semiconductor on the first and the second semiconductor layers of the second conductivity type and on the gate electrode; and a step of forming a contact on the first and the second semiconductor layers of the second conductivity type.