The present invention provides a method for forming a microelectronic structure, the method comprises the following steps: providing a substrate with a surface; coating a composition on a surface, while the composition comprises a compound selected from the group consisting of polymers, oligomers, and mixtures thereof, the compound comprises non-phenolic acid group; vinyl ether crosslinker and a solvent system, the compound and the crosslinker are dissolved or dispersed in the solvent system so that the compound in the composition is crosslinked, a composition layer which basically does not dissolve in photoresist solvent is formed, and a crosslinking composition which comprises the connecting group with the following structure formula is formed; forming the photoresist layer on the composition; exposing the composition for forming the exposure part of the composition; causing the composition to contact with a developer thereby removing the exposure part from the surface.