知搜-全球专利检索

  1. 登录
  2. 注册
发明授权
CN101794778B 半导体器件 有权

半导体器件
摘要：
一种半导体器件包括具有第一表面(10a)和第二表面(10b)的半导体衬底(10)。主区域(11)和感测区域(13)形成于所述半导体衬底(10)的所述第一表面侧上。RC-IGBT形成于所述主区域(11)中，且用于传输与流经所述RC-IGBT的电流成比例的电流的感测元件(32)形成于所述感测区域(13)中。所述感测元件(32)的集电极区(24)和阴极区(25，27)形成于所述半导体衬底(10)的所述第二表面侧上。所述集电极区(24)在所述半导体衬底(10)的厚度方向上位于所述感测区域(13)的正下方。所述阴极区(25，27)在所述厚度方向上不是位于所述感测区域(13)的正下方。
摘要（英）：

A semiconductor device includes a semiconductor substrate (10) having a first surface(10a) and a second surface (10b). A main region (11) and a sensing region (13) are formed on the first surface side of the semiconductor substrate(10). A RC-IGBT is formed in the main region (11) and a sensing element (32) for passing electric currents proportional to electric currents flowing through the RC-IGBTis formed in the sensing region (13). A collector region (24) and a cathode region (25, 27) of the sensing element (32) are formed on the second surface side of the semiconductor substrate(10). The collector region (24) is located directly below the sensing region (13) in a thickness direction of the semiconductor substrate (10). The cathode region (25, 27) is not located directly below the sensing region (13) in the thickness direction.

公开/授权文献
0/0