The invention discloses a multi-point silicon transistor with double ultra sallow isolation structures, comprising at least two adjacent transistor units. Each transistor unit is respectively and horizontally arranged in a silicon substrate and the adjacent transistor units are symmetrically arranged; each transistor unit comprises a first ultra shallow channel structure, a second ultra shallow channel structure, a first type doped zone, a second type doped zone and a second type light doped zone arranged between the first type doped zone and the second type doped zone. The first type doped zone and the second type doped zone are not only adjacent to the first ultra shallow channel structure and the second ultra shallow channel structure, but also adjacent to the second light doped zone. In addition, a first type emitter structure is formed on the surface of the second light doped zone. The invention can ensure that the internal resistance of a base electrode connecting lead connectedwith a base electrode is reduced so as to reduce the power consumption of the entire device.