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发明授权
CN101647090B 射频遮板及沉积方法 失效 - 权利终止

射频遮板及沉积方法
摘要：
本发明一般包括用于等离子体工艺设备的RF遮板组件。RF遮板组件可降低工艺期间蔓延至(creep)基板及遮蔽框下方的等离子体的量，因而减少发生在不期望的表面上的沉积量。通过减少在不期望的表面上的沉积量，粒子剥落现象降低，因此可减少基板的污染情形。
摘要（英）：

The present invention generally comprises an RF shutter assembly for use in a plasma processing apparatus. The RF shutter assembly may reduce the amount of plasma creep below the substrate and shadow frame during processing, thereby reducing the amount of deposition that occurs on undesired surfaces. By reducing the amount of deposition on undesired surfaces, particle flaking and thus, substrate contamination may be reduced.

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