The invention provides a method for miniaturizing a pattern without largely impairing the production cost or production efficacy. Also disclosed is a microfine resist pattern. Further disclosed is a rThe invention provides a method for miniaturizing a pattern without largely impairing the production cost or production efficacy. Also disclosed is a microfine resist pattern. Further disclosed is a resist substrate treatment solution for achieving the microfine resist pattern. Specifically disclosed is a method for forming a pattern, which comprises the step of treating a resist pattern formed afesist substrate treatment solution for achieving the microfine resist pattern. Specifically disclosed is a method for forming a pattern, which comprises the step of treating a resist pattern formed after a development processing procedure with a resist substrate treatment solution containing a water-soluble polymer having an amino group (particularly, a tertiary polyamine), thereby reducing the efter a development processing procedure with a resist substrate treatment solution containing a water-soluble polymer having an amino group (particularly, a tertiary polyamine), thereby reducing the effective size of the resist pattern formed by the development processing procedure. Also specifically disclosed are a resist pattern formed by the method and a treatment solution for use in the method.fective size of the resist pattern formed by the development processing procedure. Also specifically disclosed are a resist pattern formed by the method and a treatment solution for use in the method.