The invention provides a plasma processing apparatus and method, which achieve wide range for plasma processing uniformity control and have almost no side effects such as CD non-uniform caused by deposition. The plasma processing apparatus has an upper electrode composed by an outer electrode and an inner electrode disposed, and a lower electrode for supporting wafer which are relatively arrangedin a chamber; the lower electrode is connected with a first high frequency power source applied by a first high frequency electric power of 40MHz and a second high frequency power source applied by asecond high frequency electric power of 3.2MHz; the outer electrode and the inner electrode are respectively connected with a first DC voltage applying circuit and a second DC voltage applying circuit, both of which apply DC voltages. When observing the upper electrode from the side of the space generated by plasma, the frequency-impedance characteristic of the outer electrode is: increasing withthe DC voltage applied to the outer electrode, the impedance reducing in 40MHz and increasing in 3.2MHz.