The invention discloses a charge pump circuit based on PDSOI technique. As transistor devices in the PDSOI technique are separated in a dielectric way and not provided with a common substrate or well region, and the body area can be taken as the design variable of the circuit. Based on the concept, a clock with the dutyfactor of 1:1 generates a two-phase overlapping clock by a two-phase overlapping clock generating circuit (11), and electrical level at the body area of an MOS transistor is caused to be changed under the coupling of a capacitance, thus realizing the function of one step of boosting charge pump and one step of decompression charge pump in the same circuit.