The invention provides a conductive structure of a semiconductor chip and a manufacturing method thereof, the conductive structure comprises a semiconductor substrate which comprises at least one metal layer, wherein the metal layer is located at the upper portion of the semiconductor substrate, the upper portion and the lower portion of the metal layer are covered with barrier layers, the barrier layer on the upper portion of the metal layer and a passivation layer coated on a structure combined by the semiconductor substrate and the metal layer are removed through etching, and the passivation layer is remained on a portion of the semiconductor substrate which is not covered by the metal layer. The invention removes the passivation layer and the barrier layer on the top portion of the first layer of metal on the base of common integrated circuit processing procedures and structures, enables the whole first layer of metal to be exposed, and is easy to use probes for circuits in the chip, thereby performing partial circuit analysis. Besides, the semiconductor chip are etched in two times, therefore, the method not only can guarantee removing the passivation layer on the metal layer, but also can not damage the lateral wall of the metal layer when in microprobe test.