The invention relates to the field of semiconductor manufacturing devices and particularly relates to an inductive coupling plasma device (ICP) and an inductive coupling coil used in the ICP device. The ICP device comprises a reaction chamber (10), a workbench (11), the inductive coupling coil, an inductance radio frequency matcher (12) and an inductance radio frequency power supply (13); the ICPdevice is characterized in that the inductive coupling coil is arranged in the reaction chamber (10) and positioned above the workbench (11); the inductive coupling coil is composed of the same two planar gridiron coils (1) which are connected in parallel and symmetrically arranged; wherein, each planar gridiron coil (1) uses a copper tube (2) to be folded into a gridiron structure according to aU-shaped wave path on a plane, a ceramic insulating inner sleeve (5) is arranged in the copper tube (2), the inner cavity of the ceramic insulating inner sleeve (5) is taken as a cooling water channel, and a ceramic insulating outer sleeve (6) is arranged outside the copper tube (2). The ICP device and the inductive coupling coil have good distribution uniformity of magnetic field, high efficiency and smaller damage to the surface of a substrate, thereby being applicable to large-area thin film deposition, etching, surface treatment and other semiconductor processing technologies.