Provided is a method of fabricating a semiconductor laser with photon crystal structure which has empty aperture arrangement. In the method, a substrate (W2) is arranged in a growing furnace (13), when a carrier gas is flowing, the temperature of the growth furnace (13) is increased to a growth temperature TG. During the process of temperature increase, an opening (17b) of an InGaN layer (17b) for forming pattern is infected, the growth and migration of the AlX2Ga1-X2N in the opening (17b) is restrained comparing with the surface of the AlX2Ga1-X2N (23). A gallium nitride series semiconductor layer (23) (such as GaN layer) is formed in the InGaN layer (17a). The gallium nitride series semiconductor layer (AlX2Ga1-X2N) (23) grows with the mode of forming a empty aperture (25) corresponding to the opening (17a). Thereby, a two-dimensional diffraction grating (26) of a two-dimensional photonic crystal is formed.