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CN101336490B 半导体器件及其制造方法 失效 - 权利终止

半导体器件及其制造方法
摘要：
一种半导体器件，在嵌入了塞(35)的绝缘膜(31)上按顺序形成有由第一组成物和第二组成物构成的第二组成物释放区域(45)、由硫属化合物构成的固体电解质区域(46)和上部电极(47)。由第一组成物和第二组成物构成的第二组成物释放区域(45)由圆顶状的电极部分(43)和将电极部分(43)的周围嵌入的绝缘膜(44)构成，在塞(35)上存在着至少1个电极部分(43)。电极部分(43)包括由如氧化钽那样的即使施加电场也仍然稳定的第一组成物构成的第一部分和由如铜或银那样的通过施加电场很容易向固体电解质区域(46)扩散并移动的第二组成物构成的第二部分。通过使从电极部分(43)供给的第二组成物在固体电解质区域(46)中移动来存储信息。
摘要（英）：

Over an insulating film (31) having a plug (35) buried therein, there are sequentially formed a second component releasing region (45) made of a first component and a second component, a solid electrolyte region (46) made of a chalcogenide, and an upper electrode region (47). The second component releasing region (45) of the first component and the second component is formed of domed electrode portions (43) and an insulating film (44) burying the peripheries of the electrode portions (43), and at least one electrode portion (43) exists over a plug (34). The electrode portions (43) are formed of a first portion made of the first component such as a tantalum oxide stable even if fed with an electric field, and a second component such as copper or silver diffusible to migrate into a solid electrolyte region (42) when fed with the electric field.; Information is stored when the second component fed from the electrode portions (43) migrates in the solid electrolyte region (46).

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