The invention provides a method for producing solar energy level polysilicon by taking quartz sands with high purity as materials. In the method, silica materials, in which the SiO2 content is more than 99 percent, are chosen to undergo water quenching, crushing, sieving, acid cleaning, magnetic separation and high voltage ionizing treatments, which makes the purity of silica particles reach morethan 99.99 percent, and the quartz sands with high purity are obtained; carbonaceous reducing agents and graphite electrodes in a mine hot stove are chloridized at a high temperature in a chlorination furnace, making the purity of carbonaceous reducing agents reach more than 99.99 percent; in the mine hot stove, the carbonaceous reducing agents are used to reduce the quartz sands with high purityso as to produce silicon, and while producing, silicon liquids are periodically discharged from the mine hot stove; the obtained silicon liquids are injected in a holding furnace, and the products directly undergo the high-frequency plasma air refining for impurity removal under the non oxidizing atmosphere, and at the same time oxidizing gases are added in the melting silicon; the silicon liquids are injected in a directional solidification furnace for the directional solidification, and the silicon is further purified, so that the solar energy level polysilicon is obtained. The method of the invention has the advantages of low investment, short building period, low manufacturing cost, simple process and no pollution; moreover, the method is also suitable for industrialization.