The invention discloses a single-layer multicrystal silicon gate MTP device and a method for manufacturing the same, wherein the device also comprises a high-voltage programming region, a memory transistor and a transistor capacitance region; however, the high-voltage programming region is a tunnel effect generating region of the same electrical property as the pre-embedded injection region of theprior high-voltage programming region. The method omits the common buried layer injection process and injects the channel formed after the formation of a multicrystal silicon gate into the high-voltage programming region, thereby forming the tunnel effect generating region of the same electrical property as the pre-embedded injection region; part of the tunnel effect generating region is formed with a channel reciprocal form layer to increase the capacitance of the tunnel effect generating region and active area breakdown voltage. Through changing device design and making use of the prior process or on the premise of changing the prior process as little as possible, the invention reaches the goal of successful embedding of a MTP through adjusting manufacturing method.