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发明公开
CN101174667A 衬底上的氧化物膜 无效 - 驳回

衬底上的氧化物膜
摘要：
公开了一种p型氧化锌膜及制造该膜和p－n或n－p结的方法。在优选实施例中，p型氧化锌膜含砷，生长在砷化镓衬底上。p型氧化锌膜的净受主浓度至少为约1015受主/cm3，电阻率低于约1欧姆厘米，霍尔迁移率在约0.1－50cm2/Vs之间。
摘要（英）：

A p-type zinc oxide film and process for preparing the film and p-n or n-p junctions is disclosed. In a preferred embodiment, the p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type zinc oxide film has a net acceptor concentration of at least about 10 17 acceptors/cm 3 , a resistivity of no greater than about 1 ohm-cm, and a Hall mobility of between about 0.1 and about 50cm 2 /Vs.

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