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Invention Grant
CN101154684B 高耐压晶体管、其制造方法以及使用其的半导体器件 失效 - 权利终止

  • Patent Title: 高耐压晶体管、其制造方法以及使用其的半导体器件
  • Patent Title (English): High withstand voltage transistor and manufacturing method thereof, and semiconductor device adopting high withstand voltage transistor
  • Application No.: CN200710153117.3
    Application Date: 2007-09-26
  • Publication No.: CN101154684B
    Publication Date: 2011-01-19
  • Inventor: 林敬司
  • Applicant: 夏普株式会社
  • Applicant Address: 日本大阪府大阪市
  • Assignee: 夏普株式会社
  • Current Assignee: 夏普株式会社
  • Current Assignee Address: 日本大阪府大阪市
  • Agency: 中国专利代理(香港)有限公司
  • Agent 浦柏明; 刘宗杰
  • Priority: 2006-261562 2006.09.26 JP
  • Main IPC: H01L29/78
  • IPC: H01L29/78 ;  H01L29/06 ;  H01L21/336
高耐压晶体管、其制造方法以及使用其的半导体器件
Abstract:
一种可防止电涌电压/电流破坏栅极氧化膜的高耐压晶体管，其具备：栅极电极，设置在半导体基板上形成的沟槽中；源极和漏极，在栅极电极的两侧，分别与栅极电极空出规定间隔来形成；电场缓和层，沿沟槽在源极侧的侧壁与沟槽在漏极侧的侧壁形成；以及电场缓和层，形成于栅极电极与源极之间、和栅极电极与漏极之间。
Abstract(English):

A high withstand voltage transistor is capable of preventing its gate oxidized film from being damaged by a surge voltage/current, and includes: a gate electrode provided in a trench formed on a semiconductor substrate; a source and a drain which are respectively formed on a side of the gate electrode and another side of the gate electrode, and which are a predetermined distance away from the gate electrode; first electric field relaxation layers one of which is formed on a wall of the trench on the side of the source and another one of which is formed on a wall of the trench on the side of the drain; and second electric field relaxation layers one of which is formed between the source and the gate electrode, and another one of which is formed between the drain and the gate electrode.

Public/Granted literature
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66 .按半导体器件的类型区分的
H01L29/68 ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76 ...单极器件
H01L29/772 ....场效应晶体管
H01L29/78 .....由绝缘栅产生场效应的
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