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Invention Grant
CN101076896B 双极器件、晶体管及它们的形成方法 失效 - 权利终止 转让

双极器件、晶体管及它们的形成方法
Abstract:
公开了一种双极互补金属氧化物半导体(BiCMOS)或NPN/PNP器件，具有集电极(112)、集电极上方的本征基底(118)、与集电极相邻的浅沟槽隔离区(114)、本征基底上方的升高的非本征基底(202)、非本征基底上方的T形发射极(800)、与发射极相邻的隔层(700)、以及由隔层与发射极隔开的硅化物(400)层。
Abstract(English):

Disclosed is a bipolar complementary metal oxide semiconductor (BiCMOS) or NPN/PNP device that has a collector (112), an intrinsic base (118) above the collector, shallow trench isolation regions (114) adjacent the collector, a raised extrinsic base (202) above the intrinsic base, a T-shaped emitter (800) above the extrinsic base, spacers (700) adjacent the emitter, and a silicide (400) layer that is separated from the emitter by the spacers.

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