The invention provides a direct current electrode used in a semiconductor device. The direct current electrode comprises two branch electrodes at least, wherein, a first branch electrode comprises a central conduction and an annular conductor; the rest branch electrode comprises an annular conductor; the annular conductor of the first branch electrode and the annular conductor of the rest branch electrode are arranged with an interval. The area of the central conductor is equal to or approximately equal to the area of each annular conductor. The direct current electrode used in the semiconductor device provided by the invention can obtain comparatively uniform electrostatic charge distribution, thus producing comparatively uniform electrostatic attraction and further ensuring the processing/treatment quality of a semiconductor apparatus, such as a wafer and the like, in a semiconductor processing/treatment technology.