The invention provides a photoelectric position detector with high sensitivity. The detector comprises a Si substrate and two electrodes. TiN film is epitaxially grown on the Si substrate by a film making method; the electrodes are respectively prepared on both sides of the Si substrate by a film coating method or a welding method. When a light spot illuminates the surface of the detector, a voltmeter is used for measuring a voltage between the electrodes; or a voltage source is connected between the electrodes and the TiN to cause a schottky diode composed of the TiN and the Si to work undera reverse bias condition, and then the current between the electrodes is measured; therefore, the position of the light spot can be determined according to the measured voltage or the current. The photoelectric position detector has the advantages of simple structure, good linearity and high sensitivity, can directly detect the voltage or the current without an additional amplifying circuit, and can detect millimicrosecond level fast-pulse signals.