-
公开(公告)号：US20230131072A1
公开(公告)日：2023-04-27
申请号：US18145343
申请日：2022-12-22
发明人： Yoshinao TAKAHASHI , Katsuya FUKAE , Korehito KATO
摘要： Provided are a method of selectively etching a film primarily containing Si, such as polycrystalline silicon (Poly-Si), single crystal silicon (single crystal Si), or amorphous silicon (a-Si) as well as a method for cleaning by removing a Si-based deposited and/or attached matter inside a sample chamber of a film forming apparatus, such as a chemical vapor deposition (CVD) apparatus, without damaging the apparatus interior.
By simultaneously introducing a monofluoro interhalogen gas (XF, where X is any of Cl, Br, and I) and nitric oxide (NO) into an etching or a film forming apparatus, followed by thermal excitation, it is possible to selectively and rapidly etch a Si-based film, such as Poly-Si, single crystal Si, or a-Si, while decreasing the etching rate of SiN and/or SiO2. It is also possible to perform cleaning by removing a Si-based deposited and/or attached matter inside a film forming apparatus, such as a CVD apparatus, without damaging the apparatus interior.-
公开(公告)号：US11621174B2
公开(公告)日：2023-04-04
申请号：US16910000
申请日：2020-06-23
发明人： Noritake Sumi , Masanobu Sato , Masayuki Orisaka , Daiki Uehara
摘要： The disclosure provides a substrate processing apparatus that processes a surface of a substrate with a processing fluid in a supercritical state, in which the substrate is protected from the pressure fluctuation caused by partial vaporization of the processing fluid in the flow path. A substrate processing apparatus which processes a surface of a substrate with a processing fluid in a supercritical state includes a chamber housing provided therein with a processing space capable of housing the substrate and a flow path which receives the processing fluid from outside and guides the processing fluid to the processing space, and a fluid supply part which pressure-feeds the processing fluid to the flow path, wherein a plurality of bent parts which change a flow direction of the processing fluid are provided in the flow path.
-
公开(公告)号：US20230098810A1
公开(公告)日：2023-03-30
申请号：US17892500
申请日：2022-08-22
发明人： Kei SUZUKI , Masaki INABA
摘要： A substrate processing method is provided, which includes: a sulfuric acid immersing step of immersing a plurality of substrates in a sulfuric acid-containing liquid within a sulfuric acid vessel; a transporting step of taking out the substrates from the sulfuric acid vessel and transporting the substrates to an ozone gas treatment unit; and an ozone exposing step of exposing the substrates transported to the ozone gas treatment unit to an ozone-containing gas. The ozone gas treatment unit may include a gas treatment chamber which accommodates the substrates. The ozone exposing step may include the step of placing the substrates taken out of the sulfuric acid vessel in a treatment space within the gas treatment chamber to expose the substrates to the ozone-containing gas.
-
公开(公告)号：US20230028053A1
公开(公告)日：2023-01-26
申请号：US17949437
申请日：2022-09-21
发明人： Yasuo KIYOHARA , Hiroaki INADOMI , Satoshi OKAMURA
摘要： A processing fluid supplying method includes: supplying a processing fluid of a gaseous state to a circulation line; generating a processing fluid of a liquid state by cooling the processing fluid of the gaseous state in the circulation line; branching the processing fluid of the liquid state from the circulation line to a branch line; and generating a processing fluid of a supercritical state by heating the processing fluid of the liquid state in the circulation line.
-
公开(公告)号：US11511350B2
公开(公告)日：2022-11-29
申请号：US17274336
申请日：2019-09-13
申请人： Desktop Metal, Inc.
发明人： Emanuel M. Sachs , Midnight Zero
摘要： Techniques for depowdering additively fabricated parts are described in which powder is separated from parts by creating a large pressure differential between the powder and parts and a nearby location. The pressure differential may cause gas to quickly flow into and/or around the powder and parts, thereby producing a force against the powder and parts. Since the powder is generally much lighter than the parts, this force may be much more effective at moving the powder than moving the parts. As a result, the powder and parts may be separated from one another. The pressure differential may be created in various ways, such as by holding the parts and part in a chamber that is pressurized with air and/or other gas(es). Rapid depressurization of the chamber may produce the aforementioned pressure differential, leading to powder movement away from the parts.
-
公开(公告)号：US11482427B2
公开(公告)日：2022-10-25
申请号：US16578587
申请日：2019-09-23
发明人： Yasuo Kiyohara , Hiroaki Inadomi , Satoshi Okamura
IPC分类号： H01L21/67 , B08B3/10 , B08B5/00 , H01L21/677
摘要： A substrate processing system includes: a substrate processing apparatus configured to process a substrate with a processing fluid; and a processing fluid supply apparatus configured to supply the processing fluid to the substrate processing apparatus. The processing fluid supply apparatus includes: a circulation line, a gas supply line, a cooler, a pump, a branch line, a heating unit, and a pressure regulator.
-
公开(公告)号：US20220299890A1
公开(公告)日：2022-09-22
申请号：US17835152
申请日：2022-06-08
发明人： Chih-Yuan YAO , Yu-Yu CHEN , Hsiang-Lung TSOU
摘要： A semiconductor manufacturing system includes a semiconductor processing apparatus. The semiconductor processing apparatus includes a processing chamber configured to perform a semiconductor process on a semiconductor wafer, and a transferring module configured to transfer the semiconductor wafer into and out of the processing chamber. The semiconductor manufacturing system also includes a particle attracting member. The semiconductor manufacturing system also includes a monitoring device configured to control the transferring module to load the particle attracting member into the processing chamber in a cleaning cycle while the semiconductor wafer is not in the processing chamber, and control the transferring module to load the particle attracting member out of the processing chamber after the cleaning cycle. In the cleaning cycle, particles in the processing chamber are attracted to the surface of a coating layer of the particle attracting member due to the potential difference between the coating layer and the particles.
-
公开(公告)号：US20220238356A1
公开(公告)日：2022-07-28
申请号：US17490040
申请日：2021-09-30
发明人： Chao GUO
摘要： A semiconductor device and cleaning system are provided. The semiconductor device includes: a device chamber, supporting column and bearing platform in the device chamber, the supporting column being configured to support the bearing platform; and an air outlet, first and second air inlet assemblies on the device chamber, the first and second air inlet assemblies being configured to introduce clean gas into the device chamber, and the air outlet being configured to discharge gas in the device chamber. The first and second air inlet assemblies are separately provided on the device chamber on the upper and lower sides of a bearing surface of the bearing platform; and one of the first and second air inlet assemblies is configured to clean the device chamber on a side of the bearing surface away from the supporting column, and other is configured to clean a gap between the supporting column and device chamber.
-
9.发明申请公开(公告)号：US20220238315A1
公开(公告)日：2022-07-28
申请号：US17583224
申请日：2022-01-25
发明人： Satoshi OHUCHIDA , Koki MUKAIYAMA , Yusuke WAKO , Maju TOMURA , Yoshihide KIHARA
摘要： A substrate processing method includes: (a) disposing a substrate on a substrate support provided in a chamber of a substrate processing apparatus; (b) supplying a processing gas including hydrogen fluoride gas into the chamber; (c) controlling a temperature of the substrate support to a first temperature, and a pressure of the hydrogen fluoride gas in the chamber to a first pressure; and (d) controlling the temperature of the substrate support to a second temperature, and the pressure of the hydrogen fluoride gas in the chamber to a second pressure. In a graph with a horizontal axis indicating a temperature and a vertical axis indicating a pressure, the first temperature and the first pressure are positioned in a first region above an adsorption equilibrium pressure curve of hydrogen fluoride, and the second temperature and the second pressure are positioned in a second region below the adsorption equilibrium pressure curve.
-
公开(公告)号：US11342202B2
公开(公告)日：2022-05-24
申请号：US16539315
申请日：2019-08-13
发明人： Chun-Yu Lee , Sen-Yeo Peng , Chui-Ya Peng
IPC分类号： H01L21/67 , B08B3/04 , H01L21/02 , H01L21/687 , B08B5/00
摘要： In an embodiment, a method includes: spinning a wafer around an axis of rotation at a center of the wafer; applying a first stream of liquid along a line starting from an initial point on the wafer adjacent to the center of the wafer, through the center of the wafer, and ending at an edge of the wafer; applying a second stream of liquid to an inner third of the line starting at the initial point and ending at a boundary point; applying a third stream of liquid to a middle third of the line starting at the boundary point; applying a fourth stream of liquid to an outer third of the line ending at the edge of the wafer; applying a fifth stream of liquid along the line starting from the initial point and ending at the edge of the wafer; and applying a stream of gas along the line starting from the initial point and ending at the edge of the wafer.
-
-
-
-
-
-
-
-
-
搜索结果
1068 条记录 (耗时 0.026 秒)
