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    Waveguide combiners having a pass-through in-coupler grating
    1.
    发明授权
    Waveguide combiners having a pass-through in-coupler grating 有权

    公开(公告)号：US12007610B2

    公开(公告)日：2024-06-11

    申请号：US17662354

    申请日：2022-05-06

    Applicant: Applied Materials, Inc.

    Inventor： Kevin Messer ,  Samarth Bhargava

    IPC: G02B6/42

    CPC classification number: G02B6/4204 ,  G02B6/4291

    Abstract: Waveguide combiners having a pass-through in-coupler grating are described herein. The waveguide combiners include at least one microdisplay and a stack of at least two waveguide layers. In one configuration of a waveguide combiner described herein, the green FOV and the blue FOV only propagate in a first waveguide and the red FOV only propagates in a second waveguide. In another configuration of a waveguide combiner described herein, the blue FOV, the red FOV, and the green FOV only propagate in the first waveguide, the second waveguide, and a third waveguide respectively. The waveguide combiners including the stack of waveguide layers reduces luminance non-uniformity, color non-uniformity, double-images, and other non-uniformities of the overlayed images from a first microdisplay and, in some embodiments, a second microdisplay.

    Active photonic integrated circuit (PIC) with embedded coupling efficiency monitoring
    4.
    发明授权
    Active photonic integrated circuit (PIC) with embedded coupling efficiency monitoring 有权
    有源光子集成电路（PIC）具有嵌入式耦合效率监控

    公开(公告)号：US09513447B1

    公开(公告)日：2016-12-06

    申请号：US14712153

    申请日：2015-05-14

    Applicant: Huawei Technologies Co., Ltd.

    Inventor： Dritan Celo ,  Dominic John Goodwill ,  Eric Bernier

    IPC: G02B6/26 ,  G02B6/42 ,  G02B6/34 ,  G02B6/122

    CPC classification number: G02B6/4225 ,  G02B6/1225 ,  G02B6/34 ,  G02B6/4291

    Abstract: An apparatus comprising a first photonic device comprising a waveguide loop configured to guide a first light from a first location of a surface to a second location of the surface, and a second photonic device comprising a light source configured to provide the first light, and a first alignment coupler optically coupled to the light source and configured to optically couple to the waveguide loop at the first location, a second alignment coupler configured to optically couple to the waveguide loop at the second location, and a photodetector optically coupled to the second alignment coupler and configured to detect the first light when the waveguide loop is aligned with the first alignment coupler and the second alignment coupler, and generate, based on the detection and on the received light, an electrical signal.

    Abstract translation: 一种包括第一光子器件的装置，包括被配置为将第一光从表面的第一位置引导到表面的第二位置的波导管，以及包括被配置为提供第一光的光源的第二光子器件，以及 第一对准耦合器，其光耦合到光源并被配置为在第一位置处光耦合到波导环路;第二对准耦合器，被配置为在第二位置处光耦合到波导环路;以及光电检测器，光耦合到第二对准耦合器 并且被配置为当波导环与第一对准耦合器和第二对准耦合器对准时检测第一光，并且基于检测和接收的光产生电信号。

    BURIED WAVEGUIDE PHOTODETECTOR
    6.
    发明申请
    BURIED WAVEGUIDE PHOTODETECTOR 有权

    公开(公告)号：US20150268417A1

    公开(公告)日：2015-09-24

    申请号：US14694265

    申请日：2015-04-23

    Applicant: International Business Machines Corporation

    Inventor： SOLOMON ASSEFA ,  WILLIAM M. GREEN ,  STEVEN M. SHANK ,  YURII A. VLASOV

    IPC: G02B6/12 ,  G02B6/42 ,  G02B6/132

    CPC classification number: G02B6/12004 ,  G02B6/131 ,  G02B6/132 ,  G02B6/136 ,  G02B6/4257 ,  G02B6/4291 ,  G02B2006/12085 ,  G02B2006/121 ,  G02B2006/12123 ,  H01L21/8238 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/0745 ,  H01L31/165 ,  H01L31/1808 ,  H01L31/1812 ,  Y02E10/547

    Abstract: A method of forming an integrated photonic semiconductor structure having a photodetector and a CMOS device may include forming the CMOS device on a first silicon-on-insulator region, forming a silicon optical waveguide on a second silicon-on-insulator region, and forming a shallow trench isolation (STI) region surrounding the silicon optical waveguide such that the shallow trench isolation electrically isolating the first and second silicon-on-insulator region. Within a first region of the STI region, a first germanium material is deposited adjacent a first side wall of the semiconductor optical waveguide. Within a second region of the STI region, a second germanium material is deposited adjacent a second side wall of the semiconductor optical waveguide, whereby the second side wall opposes the first side wall. The first and second germanium material form an active region that evanescently receives propagating optical signals from the first and second side wall of the semiconductor optical waveguide.

    Abstract translation: 形成具有光电检测器和CMOS器件的集成光子半导体结构的方法可以包括在绝缘体上的第一绝缘体区域上形成CMOS器件，在第二绝缘体上硅区域上形成硅光波导，并形成 浅沟槽隔离（STI）区域，使得浅沟槽隔离电隔离第一和第二绝缘体上硅区域。 在STI区域的第一区域内，第一锗材料沉积在半导体光波导的第一侧壁附近。 在STI区域的第二区域内，与半导体光波导的第二侧壁相邻地沉积第二锗材料，由此第二侧壁与第一侧壁相对。 第一和第二锗材料形成有源区，其从半导体光波导的第一和第二侧壁瞬时接收传播的光信号。

    BURIED WAVEGUIDE PHOTODETECTOR
    8.
    发明申请
    BURIED WAVEGUIDE PHOTODETECTOR 有权

    公开(公告)号：US20140197507A1

    公开(公告)日：2014-07-17

    申请号：US13741416

    申请日：2013-01-15

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： SOLOMON ASSEFA ,  WILLIAM M. GREEN ,  STEVEN M. SHANK ,  YURII A. VLASOV

    IPC: H01L31/0232 ,  H01L31/18

    CPC classification number: G02B6/12004 ,  G02B6/131 ,  G02B6/132 ,  G02B6/136 ,  G02B6/4257 ,  G02B6/4291 ,  G02B2006/12085 ,  G02B2006/121 ,  G02B2006/12123 ,  H01L21/8238 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/0745 ,  H01L31/165 ,  H01L31/1808 ,  H01L31/1812 ,  Y02E10/547

    Abstract: A method of forming an integrated photonic semiconductor structure having a photodetector and a CMOS device may include forming the CMOS device on a first silicon-on-insulator region, forming a silicon optical waveguide on a second silicon-on-insulator region, and forming a shallow trench isolation (STI) region surrounding the silicon optical waveguide such that the shallow trench isolation electrically isolating the first and second silicon-on-insulator region. Within a first region of the STI region, a first germanium material is deposited adjacent a first side wall of the semiconductor optical waveguide. Within a second region of the STI region, a second germanium material is deposited adjacent a second side wall of the semiconductor optical waveguide, whereby the second side wall opposes the first side wall. The first and second germanium material form an active region that evanescently receives propagating optical signals from the first and second side wall of the semiconductor optical waveguide.

    Abstract translation: 形成具有光电检测器和CMOS器件的集成光子半导体结构的方法可以包括在绝缘体上的第一绝缘体区域上形成CMOS器件，在第二绝缘体上硅区域上形成硅光波导，并形成 浅沟槽隔离（STI）区域，使得浅沟槽隔离电隔离第一和第二绝缘体上硅区域。 在STI区域的第一区域内，第一锗材料沉积在半导体光波导的第一侧壁附近。 在STI区域的第二区域内，与半导体光波导的第二侧壁相邻地沉积第二锗材料，由此第二侧壁与第一侧壁相对。 第一和第二锗材料形成有源区，其从半导体光波导的第一和第二侧壁瞬时接收传播的光信号。

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