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公开(公告)号：US10446242B2
公开(公告)日：2019-10-15
申请号：US15619157
申请日：2017-06-09
Applicant: WESTERN DIGITAL TECHNOLOGIES, INC.
Inventor： Stella Achtenberg , Eran Sharon , David Rozman , Alon Eyal , Idan Alrod , Dana Lee
IPC: G11C7/00 , G11C16/34 , G11C29/52 , H03M13/29 , G11C16/26 , G06F11/10 , G11C7/04 , G11C11/56 , G11C16/10 , G11C29/02
Abstract: A device includes a memory and a controller coupled to the memory. The controller is configured to determine a temperature-based value of a search parameter in response to detecting that an error rate of a codeword read from the memory exceeds a threshold error rate. The controller is further configured to iteratively modify one or more memory access parameters associated with reducing temperature-dependent threshold voltage variation and to re-read the codeword using the modified one or more memory access parameters.
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公开(公告)号：US10379754B2
公开(公告)日：2019-08-13
申请号：US15876119
申请日：2018-01-20
Applicant: WESTERN DIGITAL TECHNOLOGIES, INC.
Inventor： Philip David Reusswig , Nian Niles Yang , Grishma Shah , Deepak Raghu , Preeti Yadav , Prasanna Desai Sudhir Rao , Smita Aggarwal , Dana Lee
Abstract: A device includes a memory device and a controller. The controller is coupled to the memory device. The controller is configured to, in response to receiving a request to perform a memory access at the memory device, determine that the memory device has a characteristic indicative of a temperature crossing. The controller is also configured to, in response to determining that the memory device has the characteristic indicative of the temperature crossing, determine that the memory device satisfies an availability criterion. The controller is further configured to, in response to determining that the memory device satisfies the availability criterion, increase a temperature of the memory device by performing memory operations on the memory device until detecting a condition related to the temperature.
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公开(公告)号：US20240312538A1
公开(公告)日：2024-09-19
申请号：US18358651
申请日：2023-07-25
Applicant: Western Digital Technologies, Inc.
CPC classification number: G11C16/3445 , G11C16/16 , G11C16/3404
Abstract: A non-volatile memory system is configured to perform a multiplane erase process that concurrently erases groups of memory cells in multiple planes. Based on that multiplane erase process, the memory system determines that a first group of memory cells in a first plane of the multiple planes is slow to erase. As a result, the system will perform one or more multiplane erase processes for the groups of memory cells in multiple planes without erasing the first group of memory cells in the first plane as part of the multiplane erase process(es).
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公开(公告)号：US11194523B2
公开(公告)日：2021-12-07
申请号：US16751615
申请日：2020-01-24
Applicant: Western Digital Technologies, Inc.
Inventor： Stella Achtenberg , Eran Sharon , David Rozman , Alon Eyal , Idan Alrod , Dana Lee
IPC: G11C7/04 , G06F3/06 , G11C16/26 , G11C11/56 , G06F11/10 , G11C16/10 , G11C16/34 , G11C29/02 , G11C29/52 , G11C29/04
Abstract: A data storage device includes a non-volatile memory and a controller coupled to the non-volatile memory. The controller is operable to measure a first threshold voltage (VT) of a memory cell under a first parameter at a read temperature and measure a second VT of the memory cell under a second parameter at the read temperature in which the first parameter is different from the second parameter. A VT correction term for the memory cell is determined based upon the first VT measurement and the second VT measurement. A read VT of the memory cell is adjusted by using the VT correction term.
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公开(公告)号：US10289343B2
公开(公告)日：2019-05-14
申请号：US15876330
申请日：2018-01-22
Applicant: Western Digital Technologies, Inc.
Inventor： Preeti Yadav , Prasanna Desai Sudhir Rao , Smita Aggarwal , Dana Lee
Abstract: A device includes a memory device and a controller. The controller is coupled to the memory device. The controller is configured to, in response to receiving a request to perform a memory access at the memory device, determine that the memory device has a characteristic indicative of a temperature crossing. The controller is also configured to, in response to the determination, increase a temperature of the memory device by performing memory operations on the memory device until detecting a condition related to the temperature.
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公开(公告)号：US09880752B2
公开(公告)日：2018-01-30
申请号：US15225884
申请日：2016-08-02
Applicant: Western Digital Technologies, Inc.
Inventor： Philip David Reusswig , Nian Niles Yang , Grishma Shah , Deepak Raghu , Preeti Yadav , Prasanna Desai Sudhir Rao , Smita Aggarwal , Dana Lee
CPC classification number: G06F3/0616 , G06F3/0634 , G06F3/0659 , G06F3/0679 , G11C7/04 , G11C16/26 , G11C16/349
Abstract: A device includes a memory device and a controller. The controller is coupled to the memory device. The controller is configured to, in response to receiving a request to perform a memory access at the memory device, determine that the memory device has a characteristic indicative of a temperature crossing. The controller is also configured to, in response to determining that the memory device has the characteristic indicative of the temperature crossing, determine that the memory device satisfies an availability criterion. The controller is further configured to, in response to determining that the memory device satisfies the availability criterion, increase a temperature of the memory device by performing memory operations on the memory device until detecting a condition related to the temperature.
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公开(公告)号：US20180293029A1
公开(公告)日：2018-10-11
申请号：US16004806
申请日：2018-06-11
Applicant: Western Digital Technologies, Inc.
Inventor： Stella Achtenberg , Eran Sharon , David Rozman , Alon Eyal , Idan Alrod , Dana Lee
CPC classification number: G06F3/0679 , G06F3/0619 , G06F3/064 , G06F11/1048 , G06F11/1068 , G11C7/04 , G11C11/5628 , G11C11/5642 , G11C16/10 , G11C16/26 , G11C16/3418 , G11C29/021 , G11C29/028 , G11C29/52 , G11C2029/0409
Abstract: A data storage device includes a non-volatile memory and a controller coupled to the non-volatile memory. The controller is operable to measure a first threshold voltage (Vt) of a memory cell under a first parameter at a read temperature and measure a second Vt of the memory cell under a second parameter at the read temperature in which the first parameter is different from the second parameter. A Vt correction term for the memory cell is determined based upon the first Vt measurement and the second Vt measurement. A read Vt of the memory cell is adjusted by using the Vt correction term.
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公开(公告)号：US10564900B2
公开(公告)日：2020-02-18
申请号：US16004806
申请日：2018-06-11
Applicant: Western Digital Technologies, Inc.
Inventor： Stella Achtenberg , Eran Sharon , David Rozman , Alon Eyal , Idan Alrod , Dana Lee
IPC: G11C7/00 , G06F3/06 , G11C16/26 , G11C11/56 , G06F11/10 , G11C16/10 , G11C7/04 , G11C16/34 , G11C29/02 , G11C29/52 , G11C29/04
Abstract: A data storage device includes a non-volatile memory and a controller coupled to the non-volatile memory. The controller is operable to measure a first threshold voltage (Vt) of a memory cell under a first parameter at a read temperature and measure a second Vt of the memory cell under a second parameter at the read temperature in which the first parameter is different from the second parameter. A Vt correction term for the memory cell is determined based upon the first Vt measurement and the second Vt measurement. A read Vt of the memory cell is adjusted by using the Vt correction term.
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公开(公告)号：US20180143788A1
公开(公告)日：2018-05-24
申请号：US15876330
申请日：2018-01-22
Applicant: WESTERN DIGITAL TECHNOLOGIES, INC.
Inventor： Preeti Yadav , Prasanna Desai Sudhir Rao , Smita Aggarwal , Dana Lee
CPC classification number: G06F3/0659 , G06F3/0616 , G06F3/0653 , G06F3/0679 , G11C7/04 , G11C16/26 , G11C16/349
Abstract: A device includes a memory device and a controller. The controller is coupled to the memory device. The controller is configured to, in response to receiving a request to perform a memory access at the memory device, determine that the memory device has a characteristic indicative of a temperature crossing. The controller is also configured to, in response to the determination, increase a temperature of the memory device by performing memory operations on the memory device until detecting a condition related to the temperature.
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公开(公告)号：US09875062B2
公开(公告)日：2018-01-23
申请号：US15061702
申请日：2016-03-04
Applicant: Western Digital Technologies, Inc.
Inventor： Preeti Yadav , Prasanna Desai Sudhir Rao , Smita Aggarwal , Dana Lee
CPC classification number: G06F3/0659 , G06F3/0616 , G06F3/0653 , G06F3/0679 , G11C7/04 , G11C16/26 , G11C16/349
Abstract: A device includes a memory device and a controller. The controller is coupled to the memory device. The controller is configured to, in response to receiving a request to perform a memory access at the memory device, determine that the memory device has a characteristic indicative of a temperature crossing. The controller is also configured to, in response to the determination, increase a temperature of the memory device by performing memory operations on the memory device until detecting a condition related to the temperature.
