公开(公告)号：US10153231B2

公开(公告)日：2018-12-11

申请号：US15466847

申请日：2017-03-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ko-Wei Lin ,  Hung-Miao Lin ,  Chun-Ling Lin ,  Ying-Lien Chen ,  Huei-Ru Tsai ,  Sheng-Yi Su

IPC: H01L23/528 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532

Abstract: An interconnect structure includes a dielectric layer and a conductor embedded in the dielectric layer. A top surface of the conductor is flush with a top surface of the dielectric layer. A cobalt cap layer is deposited on the top surface of the conductor. A nitrogen-doped cobalt layer is disposed on the cobalt cap layer.

公开(公告)号：US10446489B2

公开(公告)日：2019-10-15

申请号：US16170059

申请日：2018-10-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ko-Wei Lin ,  Hung-Miao Lin ,  Chun-Ling Lin ,  Ying-Lien Chen ,  Huei-Ru Tsai ,  Sheng-Yi Su

IPC: H01L23/528 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L23/522

Abstract: An interconnect structure includes a dielectric layer and a conductor embedded in the dielectric layer. A top surface of the conductor is flush with a top surface of the dielectric layer. A cobalt cap layer is deposited on the top surface of the conductor. A nitrogen-doped cobalt layer is disposed on the cobalt cap layer.

公开(公告)号：US20190067184A1

公开(公告)日：2019-02-28

申请号：US16170059

申请日：2018-10-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ko-Wei Lin ,  Hung-Miao Lin ,  Chun-Ling Lin ,  Ying-Lien Chen ,  Huei-Ru Tsai ,  Sheng-Yi Su

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/532 ,  H01L21/285

CPC classification number: H01L23/528 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76871 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53295

Abstract: An interconnect structure includes a dielectric layer and a conductor embedded in the dielectric layer. A top surface of the conductor is flush with a top surface of the dielectric layer. A cobalt cap layer is deposited on the top surface of the conductor. A nitrogen-doped cobalt layer is disposed on the cobalt cap layer.

公开(公告)号：US10079177B1

公开(公告)日：2018-09-18

申请号：US15694354

申请日：2017-09-01

Applicant: United Microelectronics Corp.

Inventor： Ko-Wei Lin ,  Ying-Lien Chen ,  Chun-Ling Lin ,  Huei-Ru Tsai ,  Hung-Miao Lin ,  Sheng-Yi Su ,  Tzu-Hao Liu

IPC: H01L21/44 ,  H01L21/768 ,  H01L21/288

CPC classification number: H01L21/76873 ,  H01L21/28556 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76862 ,  H01L23/53238

Abstract: A method is provided for forming copper material over a substrate. The method includes forming a barrier layer over a substrate. Then, a depositing-soaking-treatment (DST) process is performed over the barrier layer. A copper layer is formed on the cobalt layer. The DST process includes depositing a cobalt layer on the barrier layer. Then, the cobalt layer is soaked with H2 gas at a first pressure. The cobalt layer is treated with a H2 plasma at a second pressure. The second pressure is lower than the first pressure.

公开(公告)号：US20180261537A1

公开(公告)日：2018-09-13

申请号：US15466847

申请日：2017-03-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ko-Wei Lin ,  Hung-Miao Lin ,  Chun-Ling Lin ,  Ying-Lien Chen ,  Huei-Ru Tsai ,  Sheng-Yi Su

IPC: H01L23/528 ,  H01L23/532 ,  H01L21/285 ,  H01L21/768

CPC classification number: H01L23/528 ,  H01L21/28556 ,  H01L21/76871 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53295

Abstract: An interconnect structure includes a dielectric layer and a conductor embedded in the dielectric layer. A top surface of the conductor is flush with a top surface of the dielectric layer. A cobalt cap layer is deposited on the top surface of the conductor. A nitrogen-doped cobalt layer is disposed on the cobalt cap layer.