公开(公告)号：US08916471B1

公开(公告)日：2014-12-23

申请号：US13975382

申请日：2013-08-26

Applicant: United Microelectronics Corp.

Inventor： Ching-Li Yang ,  Chien-Li Kuo ,  Chung-Sung Chiang ,  Yu-Han Tsai ,  Chun-Wei Kang

IPC: H01L21/44 ,  H01L29/40 ,  H01L21/768 ,  H01L23/552 ,  H01L23/538

CPC classification number: H01L21/76898 ,  H01L21/76897 ,  H01L23/481 ,  H01L23/5225 ,  H01L23/5384 ,  H01L24/16 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2225/06513 ,  H01L2225/06537 ,  H01L2225/06541 ,  H01L2924/3025

Abstract: A method for forming a through silicon via for signal and a shielding structure is provided. A substrate is provided and a region is defined on the substrate. A radio frequency (RF) circuit is formed in the region on the substrate. A through silicon trench (TST) and a through silicon via (TSV) are formed simultaneously, wherein the TST encompasses the region to serve as a shielding structure for the RF circuit. A metal interconnection system is formed on the substrate, wherein the metal interconnection system comprises a connection unit that electrically connects the TSV to the RF circuit to provide a voltage signal.

Abstract translation: 提供一种用于形成用于信号的通硅通孔和屏蔽结构的方法。 提供衬底并且在衬底上限定区域。 在基板上的区域中形成射频（RF）电路。 同时形成贯通硅沟槽（TST）和贯穿硅通孔（TSV），其中TST包围用作RF电路的屏蔽结构的区域。 在基板上形成金属互连系统，其中金属互连系统包括将TSV电连接到RF电路以提供电压信号的连接单元。

公开(公告)号：US11784214B2

公开(公告)日：2023-10-10

申请号：US17899807

申请日：2022-08-31

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Bo-Wei Huang ,  Chun-Wei Kang ,  Ho-Yu Lai ,  Chih-Sheng Chang

IPC: H01L23/64 ,  H01L49/02

CPC classification number: H01L28/84 ,  H01L23/642 ,  H01L28/40

Abstract: A method for fabricating a metal-insulator-metal (MIM) capacitor is provided. The MIM capacitor includes a substrate, a first metal layer, a deposition structure, a dielectric layer and a second metal layer. The first metal layer is disposed on the substate and has a planarized surface. The deposition structure is disposed on the first metal layer, and at least a portion of the deposition structure extends into the planarized surface, wherein the first metal layer and the deposition structure have the same material. The dielectric layer is disposed on the deposition structure. The second metal layer is disposed on the dielectric layer.

公开(公告)号：US11469294B2

公开(公告)日：2022-10-11

申请号：US16862827

申请日：2020-04-30

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Bo-Wei Huang ,  Chun-Wei Kang ,  Ho-Yu Lai ,  Chih-Sheng Chang

IPC: H01L49/02 ,  H01L23/64

Abstract: A metal-insulator-metal (MIM) capacitor includes a substrate, a first metal layer, a deposition structure, a dielectric layer and a second metal layer. The first metal layer is disposed on the substrate and has a planarized surface. The deposition structure is disposed on the first metal layer, and at least a portion of the deposition structure extends into the planarized surface, wherein the first metal layer and the deposition structure have the same material. The dielectric layer is disposed on the deposition structure. The second metal layer is disposed on the dielectric layer.