公开(公告)号：US20240145412A1

公开(公告)日：2024-05-02

申请号：US17994382

申请日：2022-11-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shih-Che Huang ,  Chao-Ting Chen ,  Jui-Fa Lu ,  Chi-Heng Lin

IPC: H01L23/60 ,  H01L23/522

CPC classification number: H01L23/60 ,  H01L23/5221 ,  H01L23/5226

Abstract: A semiconductor device includes a logic circuit region having at least one core device and at least one input/output (I/O) device. The at least one core device has a first accumulative antenna ratio, and the at least one I/O device has a second accumulative antenna ratio. The first accumulative antenna ratio is greater than the second accumulative antenna ratio.

公开(公告)号：US20130337622A1

公开(公告)日：2013-12-19

申请号：US13971763

申请日：2013-08-20

Applicant: United Microelectronics Corp.

Inventor： Chan-Lon Yang ,  Ching-Nan Hwang ,  Chi-Heng Lin ,  Chun-Yao Yang ,  Ger-Pin Lin ,  Ching-I Li

IPC: H01L49/02

CPC classification number: H01L28/24 ,  H01L21/26593 ,  H01L21/32155 ,  H01L21/76224 ,  H01L27/0629 ,  H01L28/20

Abstract: A semiconductor process is provided, including following steps. A polysilicon layer is formed on a substrate. An asymmetric dual-side heating treatment is performed to the polysilicon layer, wherein a power for a front-side heating is different from a power for a backside heating.

Abstract translation: 提供半导体工艺，包括以下步骤。 在基板上形成多晶硅层。 对多晶硅层进行不对称双面加热处理，其中用于正面加热的功率不同于用于背面加热的功率。

公开(公告)号：US20150104914A1

公开(公告)日：2015-04-16

申请号：US14551922

申请日：2014-11-24

Applicant: United Microelectronics Corp.

Inventor： Chan-Lon Yang ,  Ching-Nan Hwang ,  Chi-Heng Lin ,  Chun-Yao Yang ,  Ger-Pin Lin ,  Ching-I Li

IPC: H01L21/265 ,  H01L21/02 ,  H01L21/3215 ,  H01L49/02 ,  H01L27/06

CPC classification number: H01L21/26593 ,  H01L21/02532 ,  H01L21/32155 ,  H01L21/324 ,  H01L21/76224 ,  H01L27/0629 ,  H01L28/20

Abstract: A semiconductor process is provided, including following steps. A polysilicon layer is formed on a substrate. The polysilicon layer is cryo-implanted with at least two of multiple species including a germanium species, a carbon species and a p- or n-type species, at a temperature ranging between −40° C. and −120° C. An asymmetric dual-side heating treatment is performed to the polysilicon layer, wherein a power for a front-side heating is different from a power for a backside heating.

Abstract translation: 提供半导体工艺，包括以下步骤。 在基板上形成多晶硅层。 多晶硅层在-40℃至-120℃的温度范围内用至少两种多种物质进行低温注入，包括锗物质，碳物质和p型或n型物质。不对称 对多晶硅层进行双面加热处理，其中用于正面加热的功率与用于背面加热的功率不同。