公开(公告)号：US20190221655A1

公开(公告)日：2019-07-18

申请号：US15869087

申请日：2018-01-12

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yen-Hsing Chen ,  Chun-Yu Chen ,  Chung-Ting Huang ,  Zih-Hsuan Huang ,  Yu-Chien Sung

IPC: H01L29/66 ,  H01L21/3213 ,  H01L21/033 ,  H01L29/78 ,  H01L27/088 ,  H01L29/06

CPC classification number: H01L29/66636 ,  H01L21/033 ,  H01L21/32139 ,  H01L27/0886 ,  H01L29/0653 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/66818 ,  H01L29/7848

Abstract: A method for fabricating a semiconductor device is disclosed. A fin is formed on a substrate. The fin protrudes from a trench isolation layer on a substrate. The fin comprises a source region, a drain region and a channel region therebetween. A dummy gate strides across the fin and surrounding the channel region. An upper portion of the fin is removed so as to form a hollow channel underneath the dummy gate. A replacement channel layer is in-situ epitaxially grown in the hollow channel.

公开(公告)号：US20190326414A1

公开(公告)日：2019-10-24

申请号：US16503461

申请日：2019-07-03

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yen-Hsing Chen ,  Chun-Yu Chen ,  Chung-Ting Huang ,  Zih-Hsuan Huang ,  Yu-Chien Sung

IPC: H01L29/66 ,  H01L27/088 ,  H01L29/78 ,  H01L21/033 ,  H01L21/3213 ,  H01L29/06

Abstract: A method for fabricating a semiconductor device is disclosed. A fin is formed on a substrate. The fin protrudes from a trench isolation layer on a substrate. The fin comprises a source region, a drain region and a channel region therebetween. A dummy gate strides across the fin and surrounding the channel region. An upper portion of the fin is removed so as to form a hollow channel underneath the dummy gate. A replacement channel layer is in-situ epitaxially grown in the hollow channel.

公开(公告)号：US10388756B2

公开(公告)日：2019-08-20

申请号：US15869087

申请日：2018-01-12

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yen-Hsing Chen ,  Chun-Yu Chen ,  Chung-Ting Huang ,  Zih-Hsuan Huang ,  Yu-Chien Sung

IPC: H01L29/66 ,  H01L21/3213 ,  H01L29/06 ,  H01L21/033 ,  H01L29/78 ,  H01L27/088

Abstract: A method for fabricating a semiconductor device is disclosed. A fin is formed on a substrate. The fin protrudes from a trench isolation layer on a substrate. The fin comprises a source region, a drain region and a channel region therebetween. A dummy gate strides across the fin and surrounding the channel region. An upper portion of the fin is removed so as to form a hollow channel underneath the dummy gate. A replacement channel layer is in-situ epitaxially grown in the hollow channel.