公开(公告)号：US20180269107A1

公开(公告)日：2018-09-20

申请号：US15458038

申请日：2017-03-14

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yat-Kai Sun ,  Chao-Nan Chen ,  Hung-Lin Shih ,  Che-Hung Huang ,  Wei-Lun Hsu ,  Cheng-Chia Liu

IPC: H01L21/8234 ,  H01L21/02 ,  H01L21/3115 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/033 ,  H01L21/308 ,  H01L29/66

Abstract: A method of forming a semiconductor device includes following steps. First of all, plural mandrel patterns are formed on a target layer. Then, plural capping layers are formed to cover a top region and sidewalls of each of the mandrel patterns, respectively. Next, plural spacers are formed at two sides of each of the capping layers, respectively. Following these, a portion of the spacers and the capping layers covered on the top regions of the mandrel patterns are simultaneously removed, and the capping layers is then removed completely.

公开(公告)号：US10079180B1

公开(公告)日：2018-09-18

申请号：US15458038

申请日：2017-03-14

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yat-Kai Sun ,  Chao-Nan Chen ,  Hung-Lin Shih ,  Che-Hung Huang ,  Wei-Lun Hsu ,  Cheng-Chia Liu

IPC: H01L21/76 ,  H01L21/8234 ,  H01L21/02 ,  H01L21/3115 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/033 ,  H01L21/308 ,  H01L29/66

Abstract: A method of forming a semiconductor device includes following steps. First of all, plural mandrel patterns are formed on a target layer. Then, plural capping layers are formed to cover a top region and sidewalls of each of the mandrel patterns, respectively. Next, plural spacers are formed at two sides of each of the capping layers, respectively. Following these, a portion of the spacers and the capping layers covered on the top regions of the mandrel patterns are simultaneously removed, and the capping layers is then removed completely.