公开(公告)号：US20240420991A1

公开(公告)日：2024-12-19

申请号：US18219107

申请日：2023-07-07

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Jing-Wen Huang ,  Chih-Yuan Wen ,  Lung-En Kuo ,  Po-Chang Lin ,  Kun-Yuan Liao ,  Chung-Yi Chiu

IPC: H01L21/762 ,  H01L27/088

Abstract: A semiconductor device with a deep trench isolation and a shallow trench isolation includes a substrate. The substrate is divided into a high voltage transistor region and a low voltage transistor region. A deep trench is disposed within the high voltage transistor region. The deep trench includes a first trench and a second trench. The first trench includes a first bottom. The second trench extends from the first bottom toward a bottom of the substrate. A first shallow trench and a second shallow trench are disposed within the low voltage transistor region. A length of the first shallow trench is the same as a length of the second trench. An insulating layer fills in the first trench, the second trench, the first shallow trench and the second shallow trench.