公开(公告)号：US11990547B2

公开(公告)日：2024-05-21

申请号：US17033897

申请日：2020-09-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Yu Chen ,  Bo-Lin Huang ,  Jhong-Yi Huang ,  Keng-Jen Lin ,  Yu-Shu Lin

IPC: H01L29/78 ,  H01L21/02 ,  H01L29/16

CPC classification number: H01L29/7848 ,  H01L21/0245 ,  H01L29/16

Abstract: A method for fabricating a semiconductor device includes the steps of forming a gate structure on a substrate, forming recesses adjacent to two sides of the gate structure, forming a buffer layer in the recesses, forming a first linear bulk layer on the buffer layer, forming a second linear bulk layer on the first linear bulk layer, forming a bulk layer on the second linear bulk layer, and forming a cap layer on the bulk layer.

公开(公告)号：US20220069127A1

公开(公告)日：2022-03-03

申请号：US17033897

申请日：2020-09-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Yu Chen ,  Bo-Lin Huang ,  Jhong-Yi Huang ,  Keng-Jen Lin ,  Yu-Shu Lin

IPC: H01L29/78 ,  H01L21/02 ,  H01L29/16

Abstract: A method for fabricating a semiconductor device includes the steps of forming a gate structure on a substrate, forming recesses adjacent to two sides of the gate structure, forming a buffer layer in the recesses, forming a first linear bulk layer on the buffer layer, forming a second linear bulk layer on the first linear bulk layer, forming a bulk layer on the second linear bulk layer, and forming a cap layer on the bulk layer.

公开(公告)号：US20240266437A1

公开(公告)日：2024-08-08

申请号：US18635018

申请日：2024-04-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Yu Chen ,  Bo-Lin Huang ,  Jhong-Yi Huang ,  Keng-Jen Lin ,  Yu-Shu Lin

IPC: H01L29/78 ,  H01L21/02 ,  H01L29/16

CPC classification number: H01L29/7848 ,  H01L21/0245 ,  H01L29/16

Abstract: A method for fabricating a semiconductor device includes the steps of forming a gate structure on a substrate, forming recesses adjacent to two sides of the gate structure, forming a buffer layer in the recesses, forming a first linear bulk layer on the buffer layer, forming a second linear bulk layer on the first linear bulk layer, forming a bulk layer on the second linear bulk layer, and forming a cap layer on the bulk layer.