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公开(公告)号：US09293458B2
公开(公告)日：2016-03-22
申请号：US14058089
申请日：2013-10-18
Applicant: Transphorm Inc.
Inventor： Primit Parikh , James Honea , Carl C. Blake, Jr. , Robert Coffie , Yifeng Wu , Umesh Mishra
IPC: H03K17/687 , H01L27/088 , H01L21/8258 , H01L27/06 , H03K17/567 , H01L23/495 , H01L25/16 , H01L23/64 , H01L25/18
CPC classification number: H01L27/0883 , H01L21/8258 , H01L23/49562 , H01L23/49575 , H01L23/642 , H01L23/647 , H01L25/165 , H01L25/18 , H01L27/0605 , H01L2224/48137 , H01L2224/48195 , H01L2224/48247 , H01L2224/48257 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13091 , H01L2924/30107 , H03K17/567 , H01L2924/00
Abstract: An electronic component includes a high-voltage depletion-mode transistor and a low-voltage enhancement-mode transistor both encased in a single package. A source electrode of the high-voltage depletion-mode transistor is electrically connected to a drain electrode of the low-voltage enhancement-mode transistor, a drain electrode of the high-voltage depletion-mode transistor is electrically connected to a drain lead of the single package, a gate electrode of the low-voltage enhancement-mode transistor is electrically connected to a gate lead of the single package, a gate electrode of the high-voltage depletion-mode transistor is electrically connected to an additional lead of the single package, and a source electrode of the low-voltage enhancement-mode transistor is electrically connected to a conductive structural portion of the single package.
Abstract translation: 电子部件包括高压耗尽型晶体管和低压增强型晶体管，两者都封装在单个封装中。 高电压耗尽型晶体管的源电极电连接到低电压增强型晶体管的漏电极，高电压耗尽型晶体管的漏极电连接到漏极引线 单个封装，低电压增强型晶体管的栅电极电连接到单个封装的栅极引线，高电压耗尽型晶体管的栅极电连接到单个封装的附加引线 并且低电压增强型晶体管的源电极电连接到单个封装的导电结构部分。
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公开(公告)号：US20140042495A1
公开(公告)日：2014-02-13
申请号：US14058089
申请日：2013-10-18
Applicant: Transphorm Inc.
Inventor： Primit Parikh , James Honea , Carl C. Blake, Jr. , Robert Coffie , Yifeng Wu , Umesh Mishra
IPC: H01L27/088
CPC classification number: H01L27/0883 , H01L21/8258 , H01L23/49562 , H01L23/49575 , H01L23/642 , H01L23/647 , H01L25/165 , H01L25/18 , H01L27/0605 , H01L2224/48137 , H01L2224/48195 , H01L2224/48247 , H01L2224/48257 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13091 , H01L2924/30107 , H03K17/567 , H01L2924/00
Abstract: An electronic component includes a high-voltage depletion-mode transistor and a low-voltage enhancement-mode transistor both encased in a single package. A source electrode of the high-voltage depletion-mode transistor is electrically connected to a drain electrode of the low-voltage enhancement-mode transistor, a drain electrode of the high-voltage depletion-mode transistor is electrically connected to a drain lead of the single package, a gate electrode of the low-voltage enhancement-mode transistor is electrically connected to a gate lead of the single package, a gate electrode of the high-voltage depletion-mode transistor is electrically connected to an additional lead of the single package, and a source electrode of the low-voltage enhancement-mode transistor is electrically connected to a conductive structural portion of the single package.
Abstract translation: 电子部件包括高压耗尽型晶体管和低压增强型晶体管，两者都封装在单个封装中。 高电压耗尽型晶体管的源电极电连接到低电压增强型晶体管的漏电极，高电压耗尽型晶体管的漏极电连接到漏极引线 单个封装，低电压增强型晶体管的栅电极电连接到单个封装的栅极引线，高电压耗尽型晶体管的栅极电连接到单个封装的附加引线 并且低电压增强型晶体管的源电极电连接到单个封装的导电结构部分。
