公开(公告)号：US20230307242A1

公开(公告)日：2023-09-28

申请号：US17704372

申请日：2022-03-25

Applicant: Tokyo Electron Limited

Inventor： Yu-Hao Tsai ,  Du Zhang ,  Mingmei Wang ,  Takatoshi Orui ,  Motoi Takahashi ,  Masahiko Yokoi ,  Koki Tanaka ,  Yoshihide Kihara

IPC: H01L21/3065

CPC classification number: H01L21/3065

Abstract: A method of processing a substrate includes patterning a mask over a dielectric layer and etching openings in the dielectric layer. The dielectric layer is disposed over the substrate. The etching includes flowing an etchant, a polar or H-containing gas, and a phosphorus-halide gas. The method may further include forming contacts by filling the openings with a conductive material.

公开(公告)号：US20240112887A1

公开(公告)日：2024-04-04

申请号：US17937151

申请日：2022-09-30

Applicant: Tokyo Electron Limited:

Inventor： Du Zhang ,  Yu-Hao Tsai ,  Masahiko Yokoi ,  Yoshihide Kihara ,  Mingmei Wang

IPC: H01J37/32 ,  H01L21/311

CPC classification number: H01J37/3244 ,  H01L21/31116 ,  H01J37/321 ,  H01J37/32724 ,  H01J2237/2001 ,  H01J2237/3341 ,  H01J2237/3345 ,  H01J2237/3346

Abstract: A method of processing a substrate that includes: flowing dioxygen (O2) and an adsorbate precursor into a plasma processing chamber that is configured to hold the substrate including an organic layer and a patterned etch mask; sustaining an oxygen-rich plasma while flowing the O2 and the adsorbate precursor, oxygen species from the O2 and the adsorbate precursor reacting under the oxygen-rich plasma to form an adsorbate; and exposing the substrate to the oxygen-rich plasma to form a recess in the organic layer, where the adsorbate forms a sidewall passivation layer in the recess.

公开(公告)号：US20240112888A1

公开(公告)日：2024-04-04

申请号：US17937179

申请日：2022-09-30

Applicant: Tokyo Electron Limited

Inventor： Du Zhang ,  Yu-Hao Tsai ,  Masahiko Yokoi ,  Mingmei Wang ,  Yoshihide Kihara

IPC: H01J37/32 ,  H01L21/311

CPC classification number: H01J37/3244 ,  H01L21/31116 ,  H01L21/31144 ,  H01J37/32091 ,  H01J37/32724 ,  H01J2237/2001 ,  H01J2237/332 ,  H01J2237/3341 ,  H01J2237/3345 ,  H01J2237/3346

Abstract: A method of processing a substrate that includes: flowing an etch gas, O2, and an adsorbate precursor into a plasma processing chamber that is configured to hold the substrate including a silicon-containing dielectric layer and a patterned mask layer, the etch gas including hydrogen and fluorine; generating a plasma in the plasma processing chamber while flowing the etch gas, O2, and the adsorbate precursor, the adsorbate precursor being oxidized to form an adsorbate; and patterning, with the plasma, the silicon-containing dielectric layer on the substrate, where the adsorbate forms a sidewall passivation layer.