公开(公告)号：US20220130717A1

公开(公告)日：2022-04-28

申请号：US17079451

申请日：2020-10-24

Applicant: Texas Instruments Incorporated

Inventor： Binghua Hu ,  Ye Shao ,  John K Arch

IPC: H01L21/762 ,  H01L29/94 ,  H01L21/761 ,  H01L21/225

Abstract: A semiconductor device has a first trench and a second trench of a trench structure located in a substrate. The second trench is separated from the first trench by a trench space that is less than a first trench width of the first trench and less than a second trench width of the second trench. The trench structure includes a doped sheath having a first conductivity type, contacting and laterally surrounding the first trench and the second trench. The doped sheath extends from the top surface to an isolation layer and from the first trench to the second trench across the trench space. The semiconductor device includes a first region and a second region, both located in the semiconductor layer, having a second, opposite, conductivity type. The first region and the second region are separated by the first trench, the second trench, and the doped sheath.

公开(公告)号：US11101342B1

公开(公告)日：2021-08-24

申请号：US16786555

申请日：2020-02-10

Applicant: Texas Instruments Incorporated

Inventor： Binghua Hu ,  Ye Shao ,  John K Arch

IPC: H01L29/06 ,  H01L21/308 ,  H01L21/3205 ,  H01L21/3105 ,  H01L29/423 ,  H01L21/762 ,  H01L21/321 ,  H01L29/40

Abstract: A semiconductor device has a deep trench in a semiconductor substrate of the semiconductor device, with linear trench segments extending to a trench intersection. Adjacent linear trench segments are connected by connector trench segments that surround a substrate pillar in the trench intersection. Each connector trench segment has a width at least as great as widths of the linear trench segments connected by the connector trench segment. The deep trench includes a trench filler material. The deep trench may have three linear trench segments extending to the trench intersection, connected by three connector trench segments, or may have four linear trench segments extending to the trench intersection, connected by four connector trench segments.

公开(公告)号：US11587864B2

公开(公告)日：2023-02-21

申请号：US17540447

申请日：2021-12-02

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Poornika Fernandes ,  Ye Shao ,  Guruvayurappan S. Mathur ,  John K. Arch ,  Paul Stulik

IPC: H01L21/00 ,  H01L23/522 ,  H01G15/00 ,  H01G4/06

Abstract: An integrated circuit (IC) includes a substrate and a first capacitor on the substrate. The first capacitor has a first width. A first dielectric layer is provided on a side of the first capacitor opposite the substrate. Further, a second capacitor is present on a side of the first dielectric layer opposite the first capacitor. The second capacitor has a second width that is smaller than the first width. The IC also has a second dielectric layer and a first metal layer. The second dielectric layer is on a side of the second capacitor opposite the first dielectric layer. The first metal layer is on a side of the second dielectric layer opposite the second capacitor.

公开(公告)号：US11222841B2

公开(公告)日：2022-01-11

申请号：US16561593

申请日：2019-09-05

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Poornika Fernandes ,  Ye Shao ,  Guruvayurappan S. Mathur ,  John K. Arch ,  Paul Stulik

IPC: H01L21/00 ,  H01L23/522 ,  H01G15/00 ,  H01G4/06

Abstract: An integrated circuit (IC) includes a substrate and a first capacitor on the substrate. The first capacitor has a first width. A first dielectric layer is provided on a side of the first capacitor opposite the substrate. Further, a second capacitor is present on a side of the first dielectric layer opposite the first capacitor. The second capacitor has a second width that is smaller than the first width. The IC also has a second dielectric layer and a first metal layer. The second dielectric layer is on a side of the second capacitor opposite the first dielectric layer. The first metal layer is on a side of the second dielectric layer opposite the second capacitor.

公开(公告)号：US12218188B2

公开(公告)日：2025-02-04

申请号：US17380060

申请日：2021-07-20

Applicant: Texas Instruments Incorporated

Inventor： Binghua Hu ,  Ye Shao ,  John K Arch

IPC: H01L29/06 ,  H01L21/308 ,  H01L21/3105 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/762 ,  H01L29/40 ,  H01L29/423

Abstract: A semiconductor device has a deep trench in a semiconductor substrate of the semiconductor device, with linear trench segments extending to a trench intersection. Adjacent linear trench segments are connected by connector trench segments that surround a substrate pillar in the trench intersection. Each connector trench segment has a width at least as great as widths of the linear trench segments connected by the connector trench segment. The deep trench includes a trench filler material. The deep trench may have three linear trench segments extending to the trench intersection, connected by three connector trench segments, or may have four linear trench segments extending to the trench intersection, connected by four connector trench segments.

公开(公告)号：US11626317B2

公开(公告)日：2023-04-11

申请号：US17079451

申请日：2020-10-24

Applicant: Texas Instruments Incorporated

Inventor： Binghua Hu ,  Ye Shao ,  John K Arch

IPC: H01L21/762 ,  H01L29/94 ,  H01L21/225 ,  H01L21/761 ,  H01L21/265 ,  H01L21/223

Abstract: A semiconductor device has a first trench and a second trench of a trench structure located in a substrate. The second trench is separated from the first trench by a trench space that is less than a first trench width of the first trench and less than a second trench width of the second trench. The trench structure includes a doped sheath having a first conductivity type, contacting and laterally surrounding the first trench and the second trench. The doped sheath extends from the top surface to an isolation layer and from the first trench to the second trench across the trench space. The semiconductor device includes a first region and a second region, both located in the semiconductor layer, having a second, opposite, conductivity type. The first region and the second region are separated by the first trench, the second trench, and the doped sheath.

公开(公告)号：US20210351269A1

公开(公告)日：2021-11-11

申请号：US17380060

申请日：2021-07-20

Applicant: Texas Instruments Incorporated

Inventor： Binghua Hu ,  Ye Shao ,  John K Arch

IPC: H01L29/06 ,  H01L21/321 ,  H01L21/3105 ,  H01L21/3205 ,  H01L21/308 ,  H01L29/423 ,  H01L29/40 ,  H01L21/762

Abstract: A semiconductor device has a deep trench in a semiconductor substrate of the semiconductor device, with linear trench segments extending to a trench intersection. Adjacent linear trench segments are connected by connector trench segments that surround a substrate pillar in the trench intersection. Each connector trench segment has a width at least as great as widths of the linear trench segments connected by the connector trench segment. The deep trench includes a trench filler material. The deep trench may have three linear trench segments extending to the trench intersection, connected by three connector trench segments, or may have four linear trench segments extending to the trench intersection, connected by four connector trench segments.

公开(公告)号：US20210249505A1

公开(公告)日：2021-08-12

申请号：US16786555

申请日：2020-02-10

Applicant: Texas Instruments Incorporated

Inventor： Binghua Hu ,  Ye Shao ,  John K Arch

IPC: H01L29/06 ,  H01L29/40 ,  H01L21/308 ,  H01L21/3105 ,  H01L29/423 ,  H01L21/762 ,  H01L21/321 ,  H01L21/3205

Abstract: A semiconductor device has a deep trench in a semiconductor substrate of the semiconductor device, with linear trench segments extending to a trench intersection. Adjacent linear trench segments are connected by connector trench segments that surround a substrate pillar in the trench intersection. Each connector trench segment has a width at least as great as widths of the linear trench segments connected by the connector trench segment. The deep trench includes a trench filler material. The deep trench may have three linear trench segments extending to the trench intersection, connected by three connector trench segments, or may have four linear trench segments extending to the trench intersection, connected by four connector trench segments.

公开(公告)号：US20190305074A1

公开(公告)日：2019-10-03

申请号：US15940058

申请日：2018-03-29

Applicant: Texas Instruments Incorporated

Inventor： Dhishan Kande ,  Ye Shao ,  David Curran

IPC: H01L49/02 ,  H01L21/3213 ,  H01L21/3205 ,  H01L21/02 ,  H01L21/311 ,  H01L27/06 ,  H01L23/522 ,  H01L21/033

Abstract: An integrated circuit (IC) includes a substrate with a semiconductor surface layer including functional circuitry having a plurality of interconnected transistors including a dielectric layer thereon with a metal stack including a plurality of metal levels over the dielectric layer. A thin film resistor (TFR) layer including at least one metal is within the metal stack. At least one capacitor is within the metal stack including a capacitor dielectric layer over a metal bottom plate formed from one of the metal levels. The capacitor top plate is formed from the TFR layer on the capacitor dielectric layer and there is at least one resistor lateral to the capacitor formed from the same TFR layer.