公开(公告)号：US20240363505A1

公开(公告)日：2024-10-31

申请号：US18765477

申请日：2024-07-08

Applicant: Taiwan Semicondutor Manufacturing Company, Ltd.

Inventor： Feng-Wei KUO ,  Wen-Shiang Liao

IPC: H01L23/495 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/768 ,  H01L23/00 ,  H01L23/29 ,  H01L23/498 ,  H01L23/522

CPC classification number: H01L23/49589 ,  H01L21/02422 ,  H01L21/31055 ,  H01L21/76832 ,  H01L23/29 ,  H01L23/49827 ,  H01L23/5223 ,  H01L24/05 ,  H01L24/11 ,  H01L28/40 ,  H01L28/60 ,  H01L2224/02331 ,  H01L2224/02372 ,  H01L2924/19041

Abstract: The present disclosure is directed to a method for forming metal insulator metal decoupling capacitors with scalable capacitance. The method can include forming a first redistribution layer with metal lines on a portion of a polymer layer, depositing a photoresist layer on the first redistribution layer, and etching the photoresist layer to form spaced apart first and second TIV openings in the photoresist layer, where the first TIV opening is wider than the second TIV opening. The method can further include depositing a metal in the first and second TIV openings to form respective first and second TIV structures in contact with the metal line, removing the photoresist layer, forming a high-k dielectric on a top surface of the first and second TIV structures, and depositing a metal layer on the high-k dielectric layer to form respective first and second capacitors.